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GaN-based devices are becoming a key technology for millimeter-wave applications. Because of outstanding material properties, recent advances in GaN device designs provided a sharp increase in performances including high power, high efficiency, reliability, linearity, and compact size. These capabilities are ideally suited for numerous millimeter-wave power applications such as wireless networks and PAs MMIC for Q-band frequency and beyond.
CNRS-IEMN
The study relied on various state-of-the-art numerical tools (RT model, assimilation OSSE and NWP forecast systems) to explore the possible impact of a Geosounder mission on the retrieval of humidity and forecast. The study showcases that some specifications are valid for such an endeavor and some needs to be refined. Future works should be directed towards a more complex information content analysis with an all sky OSSE set up and maybe a multispectral/hyperspectral perspective on the channel selection.
CNRS
Lab. d`Astronomie...
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