To perform physics based modelling of new GaN device concepts to improve efficiency up to 20%

Current European RF GaN power processes are optimised for up to K band, however the efficiency is less than is required to meet future planned missions. In order to meet the need for operation up to W band with up to 20% improvement in efficiency, together with improvements in linearity, a step change in device architecture is required.

This is needed to improve the efficiency of High Power Amplifier (HPA), critical element for the deployment of active array antennas, for the next generation of mm-wave SAR antennas. New concepts are to be investigated such as multiple active devices channels, graded barrier layers, 3D gate structures.

The activity encompasses the following tasks : 

- literature review to identify materials and structure

- design and simulation 

- definition of future work towards evaluation.