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Study on millimeter wave GaN transistors for space applications

Thu, 10/26/2023 - 17:12
Start Date: 
2021
Programme: 
Discovery
End Date: 
2023
Programme Reference: 
S 2021-09
Country: 
France
Contractor: 
CNRS-IEMN
Status: 
Closed
Description: 

GaN-based devices are becoming a key technology for millimeter-wave applications. Because of outstanding material properties, recent advances in GaN device designs provided a sharp increase in performances including high power, high efficiency, reliability, linearity, and compact size. These capabilities are ideally suited for numerous millimeter-wave power applications such as wireless networks and PAs MMIC for Q-band frequency and beyond. Therefore, GaN will play an important role in advanced RF and millimeter-wave applications including for instance 5G and satellite communications or military oriented applications in harsh environment. However, there is no technology satisfying the whole mm-wave requirement including high DC, RF, large signal, linearity and reliability performances. The aim of this work is to increase the understanding of physical mechanisms involved in mm-wave high performance transistors and their related limitations.

Application Domain: 
Generic Technologies
Technology Domain: 
23 - Electrical, Electronic and Electro-mechanical (EEE) Components and Quality
Competence Domain: 
1-EEE Components, Photonics, MEMS
Keywords: 
GaN transistors
millimeter-wave applications
Executive summary: 
Final presentation: